Evolution of Fermi Surface Properties of the Topological Crystalline Insulators SnxPb1-xTe/Se With Sn Doping

This work presents the Fermi surface studies of the topological crystalline insulators, SnxPb1-xTe/Se with Sn doping using torque magnetometry. The torque signal measured at higher magnetic fields up to 35 T show clear de Haas-van Alphen (dHvA) oscillations. The dHvA oscillations are well-defined and consists of three major frequencies (19 T, 51 T, and 225 T) for the x = 0.35 Se sample, one major frequency (53 T) in the x = 0.4 Te sample, and one major frequency (240 T) for the x = 0.2 Te sample. To better understand the Fermi surface properties, we rotated the samples with respect to the applied field direction and measured dHvA oscillations at different tilt angles. We will present analyses of temperature dependent dHvA data using the Lifshitz-Kosevich (LK) formula and Berry phase calculations.